agr21 030ef 30 w , 2.1 10 ghz?2.1 70 ghz, n-chann e l e-mo de, la teral m o sfet introduc tion t he a g r21 030e f i s a hi gh- v olt a ge, gol d- me t ali ze d, la ter a l l y di f f u s e d m e t a l ox id e s e mi c ondu ct or ( ldmo s ) rf pow er tr ans is tor s ui t abl e f or wid eba nd co de d i v i s i o n mu lti p l e ac ce ss ( w - c dma ) , si ngl e an d mul t i c a r r i er cl as s ab wi r e les s bas e st at ion po wer amp l i f ie r app li cat i on s. f i g u r e 1. a g r 2103 0e f ( f la n g e d ) p ac kag e feature s t y pic a l pe r f o r man c e for 2 c a r r ie r 3g pp w - c dma sy s t em s. f 1 = 213 5 m h z a nd f 2 = 214 5 m h z w i th 3.8 4 mhz c ha nnel b w , ad ja- ce nt c han nel b w = 3. 84 m h z at f 1 ? 5 mhz an d f 2 + 5 m hz. t h ir d- or d e r di sto r t i on is me as ur ed ov er 3.8 4 mh z b w at f 1 ? 10 mhz a nd f 2 + 10 mhz . t y pi ca l p / a r atio of 8.5 d b at 0. 01% ( p r o bab i l i t y ) ccdf: ? o u tp ut p o wer : 7 w . ? p o we r g a i n : 14 .5 d b . ? ef fi ci en c y : 26 % . ? im 3: ? 34 d b c . ? a c pr : ?3 7 db c . ? re tur n l o s s : ?12 db . hig h - r e l i abi li ty , gol d- me t a li za tio n pr o c es s . low hot c ar r i e r inj ec t io n ( hci) i ndu ce d bi as dr i f t ov er 20 ye ar s. inte r n all y mat c he d. hig h ga in, ef fic i e nc y , and li nea r i ty . inte gr ated es d p r o t ec tio n. dev i c e c an wi ths t and a 1 0:1 vo lt ag e s t an din g wa ve r a tio ( v s w r) a t 28 vd c, 2 140 mhz , 3 0 w c onti nu- ous wav e ( c w ) ou tput powe r . lar ge si gn al i mp eda nc e p ar am ete r s av ai la bl e. t a b le 1 . t h e r m al ch a r ac t e rist ic s t a ble 2 . abs o lute m a x i mum ra tings * * s t ress e s in exces s of t he absolut e m a ximum rat i ngs can caus e perm anent dam age t o t he device. t hes e are absolut e s t re ss rat - ings onl y . f unct i ona l operat ion of t he dev ice is not im pl ied at t hes e or any ot her c ondit i ons in ex cess of t hose given i n t h e operat ional sec t ions of t he dat a s heet . e xpos ure t o absolut e max i mum rat i ngs f o r ext ended periods can a d versely af f e ct device reliabil i t y . t a ble 3 . es d r a ting * * alt hough elec t ros t a t i c d i s c harge (es d ) prot ect i on circu i t r y has been designed i n t o t h is device, pro per pr ecaut i ons m u st be t a ken t o avoid ex posure t o es d and elect rical overst res s ( eo s) during al l handli n g, assem bly , and t es t operat i on s. ager e employ s a hum an-body mod e l (hb m), a mac h ine m odel (m m) , and a cha rged-devic e m odel (cd m) quali f icat i o n requirem ent in order t o determine e s d-s us cept i bilit y limit s a nd protec tion design ev al ua t i on. e s d volt age t hres hol d s are depende nt on t he circu i t p a ramet e rs used in eac h of t he m odels, as def ined by je dec's je sd22-a 1 14b (hb m) , jes d 22-a 1 15a (mm ), and je sd22-c 101a (cdm ) s t andar ds. cau ti o n : mo s d evi ces are su s cep t i b l e to d a mag e fro m el ec- tro s t a ti c ch arg e . reaso n a b l e p r ecau ti o n s i n h a n - d l i n g an d p a c kag i n g mo s d evi c es sh o u l d b e o b served . pa ram e t e r s ym v a lu e u n i t th er ma l r e si st a n c e , j unc ti on to ca se r ? jc 2. 0 c / w pa r a m e te r s y m v a l u e u ni t d r ai n- so ur ce v o lt ag e v ds s 65 vd c g a t e -s o u rc e v o l t a g e v gs ? 0 . 5, 15 vd c t o t a l di ssi p a t i on at t c = 2 5 c p d 87.5 w der ate a bov e 25 c? 0 . 5 w / c cw rf i nput p o wer (v ds =3 1v ) ?1 0 w o p er ati ng ju nc tio n t e m per a- tur e t j 20 0 c s t or ag e t em p er at u r e r a ng e t stg ?6 5, 150 c ag r21 030 ef m in imu m ( v ) cla ss hbm 500 1 b mm 50 a cdm 1500 4 peak devices
30 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet AGR21030EF electrical characteristics recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. dc characteristics table 5. rf characteristics * 3gpp w-cdma, typical p/a ratio of 8.5 db at 0.01% ccdf, f1 = 2135 mhz, and f2 = 2145 mhz. v dd = 28 vdc, i dq = 300 ma, and p out = 7 w avg. nominal operating voltage 28 vdc. qualified for a maximum operating voltage of 32 vdc 0.5 v. parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs = 0, i d =38a) v (br)dss 65 ? ? vdc gate-source leakage current (v gs = 5 v, v ds =0v) i gss ??1adc zero gate voltage drain leakage current (v ds = 28 v, v gs =0v) i dss ??3adc on characteristics forward transconductance (v ds = 10 v, i d = 0.4 a) g fs ? 2.4 ? s gate threshold voltage (v ds =10v, i d = 100 a) v gs(th) 2.8 3.4 4.0 vdc gate quiescent voltage (v ds = 28 v, i d = 300 ma) v gs(q) 3.0 3.8 4.6 vdc drain-source on-voltage (v gs =10v, i d = 0.4 a) v ds(on) ? 0.30 ? vdc parameter symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds =28v, v gs = 0, f = 1.0 mhz) (this part is internally matched on both the input and output.) c rss ? 0.8 ? pf functional tests (in agere systems supplied test fixture) common-source amplifier power gain* g ps 13.5 14.5 ? db drain efficiency* 24 26 ? % third-order intermodulation distortion* (im3 distortion measured over 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz) im3 ? ?34 ?32 dbc adjacent channel power ratio* (acpr measured over bw of 3.84 mhz @ f1 ? 5 mhz and f2 + 5 mhz) acpr ? ?37 ?36 dbc output power, 1 db compression point (v dd = 28 v, f c = 2140.0 mhz) p1db 27 30 ? w input return loss* irl ? ?12 ?10 db output mismatch stress (v dd = 28 v, p out = 30 w (cw), i dq = 300 ma, f c = 2140.0 mhz vswr = 10:1; [all phase angles]) no degradation in output power. 150 50 (in supplied test fixture)
AGR21030EF 30 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet test circuit illustrations for AGR21030EF a. schematic parts list: microstrip line: z1, 0.510 in. x 0.066 in.; z2, 0.470 in. x 0.066 in.; z3, 0.375 in. x 0.066 in. z4, 0.280 in. x 0.540 in.; z5, 0.570 in. x 0.05 0 in.; z6, 0.360 in. x 0.390 in.; z7, 0.640 in. x 0.125 in.; z8, 0.685 in. x 0.066 in.; z9, 0.685 in. x 0.050 in. atc ? chip capacitor: c1, c5: 8.2 pf 100b8r2jw500x; c2, c6 6.8 pf 100b6r8jw500x. kemet ? capacitor: c8 0.01 f c1206104k5rac7800; c9 0.1 f grm40x7r103k100al. vitramon ? 1206 capacitor: c3, c7: 22,000 pf. sprague ? tantalum capacitor: c4, c10: 22 f, 35 v. fair-rite ? ferrite bead: fb1 2743019447. 1206 size chip resistor: r1 12 ? . taconic ? orcer rf-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. b. component layout figure 2. AGR21030EF test circuit dut r1 c4 + c1 z2 z1 c5 z7 z8 rf input v gg v dd rf output z6 z5 fb1 c3 c2 c8 3 1 2 pins: 1. drain 2. gate 3. source c6 c7 c10 + c9 z3 z4 z9
AGR21030EF 30 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. AGR21030EF label notes: m before the part number denotes model program. x bef ore the part number denot es engineering prototype. the last two letters of the part number denote wafer technology and package type. yywwll is the date code including place of ma nufacture: year year work week (yyww), ll = location (al = allentown, pa; t = thai land). xxxxx = five-digit wafer lot number. zzzzzzz = seven-digit assembly lot number on production parts. z z zzz z zz z zzz = 1 2 -d igi t ( f i ve - d i git lot, t wo - d i git wafe r , and fi ve -d igit se ri al number) on models and engineer ing pr o t otypes. a agr21045f yywwll zzzzzzz 1 2 3 1 3 2 pins: 1. drain 2. gate 3. source peak devices agr21030xf yywwll xxxxx zzzzzzz
. AGR21030EF 30 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) test conditions: v dd = 28 v, i dq = 300 ma, p out = 7 w. 2-carrier w-cdma 3gpp, peak-t o-average = 8.5 db @ 0.01% ccdf, 10 mhz spacing, 3.84 cbw. figure 8. broadband performance test conditions: v dd = 28 v, i dq = 300 ma, p out = 7 w. 2-carrier w-cdma 3gpp, peak-t o-average = 8.5 db @ 0.01% ccdf, 10 mhz spacing, 3.84 cbw. figure 9. spectral plot 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 2100 2110 2120 2130 2140 2150 2160 2170 2180 frequency (mhz) gain (db) z -50.0 -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 30.0 40.0 50.0 (%), rl (db), imd3 (dbc), acpr (dbc) z gain rl imd3 acpr f1 f2 imd3 i md3 acpr a cpr center 2.140 ghz span 50 mhz -45 -40 -35 -30 -25 -20 -15 -10 -5 -0 +5
30 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet AGR21030EF typical performance characteristics (continued) test conditions: v dd = 28 vdc, f = 2140 mhz, i dq = 300 ma cw input. figure 10. am-am and am-pm characteristics 9.0 10.0 11.0 12.0 13.0 14.0 15.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 pin (dbm) z power gain (db) z -20.0 -18.0 -16.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 phase (degrees) z am to am (power gain [db]) am to pm (phase [degrees])
. AGR21030EF 30 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) test conditions: v dd = 28 v, i dq = 300 ma, p out = 7 w. 2-carrier w-cdma 3gpp, peak-t o-average = 8.5 db @ 0.01% ccdf, 10 mhz spacing, 3.84 cbw. figure 8. broadband performance test conditions: v dd = 28 v, i dq = 300 ma, p out = 7 w. 2-carrier w-cdma 3gpp, peak-t o-average = 8.5 db @ 0.01% ccdf, 10 mhz spacing, 3.84 cbw. figure 9. spectral plot 0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 2100 2110 2120 2130 2140 2150 2160 2170 2180 frequency (mhz) gain (db) z -50.0 -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 30.0 40.0 50.0 (%), rl (db), imd3 (dbc), acpr (dbc) z gain rl imd3 acpr f1 f2 imd3 i md3 acpr a cpr center 2.140 ghz span 50 mhz -45 -40 -35 -30 -25 -20 -15 -10 -5 -0 +5
30 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet AGR21030EF typical performance characteristics (continued) test conditions: v dd = 28 vdc, f = 2140 mhz, i dq = 300 ma cw input. figure 10. am-am and am-pm characteristics 9.0 10.0 11.0 12.0 13.0 14.0 15.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 pin (dbm) z power gain (db) z -20.0 -18.0 -16.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 phase (degrees) z am to am (power gain [db]) am to pm (phase [degrees])
AGR21030EF 30 w, 2.110 ghz?2.170 ghz, n-channel e-mode, lateral mosfet package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. AGR21030EF label notes: m before the part number denotes model program. x bef ore the part number denot es engineering prototype. the last two letters of the part number denote wafer technology and package type. yywwll is the date code including place of ma nufacture: year year work week (yyww), ll = location (al = allentown, pa; t = thai land). xxxxx = five-digit wafer lot number. zzzzzzz = seven-digit assembly lot number on production parts. z z zzz z zz z zzz = 1 2 -d igi t ( f i ve - d i git lot, t wo - d i git wafe r , and fi ve -d igit se ri al number) on models and engineer ing pr o t otypes. a agr21045f yywwll zzzzzzz 1 2 3 1 3 2 pins: 1. drain 2. gate 3. source peak devices agr21030xf yywwll xxxxx zzzzzzz
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